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February 15, 2020 21:51
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IEDM 2019
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| CMOS | |
| First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications | |
| Taiwan Semiconductor Research Institute,Hsinchu,Taiwan | |
| National Cheng Kung University,Dept. of Electrical Engineering,Tainan,Taiwan | |
| National Chiao Tung University,Dept. of Electrophysics,Hsinchu,Taiwan | |
| National Sun Yat-sen University,Dept. of Electrical Engineering,Kaohsiung,Taiwan | |
| Feng Chia University,Dept. of Electronic Engineering,Taichung,Taiwan | |
| Mechanical and Systems Research Laboratories, Industrial Technology Research Institute,Hsinchu,Taiwan | |
| Institute of Fluid Science, Tohoku University,Sendai,Japan | |
| https://ieeexplore.ieee.org/document/8993525 | |
| 5nm CMOS Production Technology Platform featuring full-fledged EUV, and High Mobility Channel FinFETs with densest 0.021µm2 SRAM cells for Mobile SoC and High Performance Computing Applications | |
| Taiwan Semiconductor Manufacturing Company,Hsinchu, Taiwan,R.O.C | |
| https://ieeexplore.ieee.org/document/8993577 | |
| Vertical Nanowire and Nanosheet FETs: Device Features, Novel Schemes for Improved Process Control and Enhanced Mobility, Potential for Faster & More Energy Efficient Circuits | |
| Imec,Leuven,Belgium,3001 | |
| https://ieeexplore.ieee.org/document/8993602 | |
| Enabling Sub-5nm CMOS Technology Scaling Thinner and Taller! | |
| imec,Leuven,Belgium | |
| https://ieeexplore.ieee.org/document/8993631 | |
| Novel forksheet device architecture as ultimate logic scaling device towards 2nm | |
| imec,Leuven,Belgium | |
| https://ieeexplore.ieee.org/document/8993635 | |
| State-of-the-art TCAD: 25 years ago and today | |
| Intel Corporation,Logic Technology Division,Hillsboro,OR,USA | |
| https://ieeexplore.ieee.org/document/8993451 | |
| Machine Learning-enhanced Multi-dimensional Co-Optimization of Sub-10nm Technology Node Options | |
| Intel Corporation,Hillsboro,OR,USA | |
| https://ieeexplore.ieee.org/document/8993557 | |
| Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transitors | |
| Minatec campus, and Univ. Grenoble Alpes,CEA-LETI,Grenoble,France,38054 | |
| IBM Research,Albany,NY,12203 | |
| https://ieeexplore.ieee.org/document/8993524 | |
| Memory | |
| A Novel Double-Density Hemi-Cylindrical (HC) Structure to Produce More than Double Memory Density Enhancement for 3D NAND Flash | |
| Macronix International Co., Ltd,Emerging Central Lab.,Hsinchu,Taiwan | |
| https://ieeexplore.ieee.org/document/8993461 | |
| 3D Semicircular Flash Memory Cell: Novel Split-Gate Technology to Boost Bit Density | |
| Kioxia Corporation,Yokkaichi,Japan | |
| https://ieeexplore.ieee.org/document/8993673 | |
| Photonics | |
| High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for over 100 Gbit/s | |
| Sun Yat-sen University,State Key Laboratory of Optoelectronic Materials and Technologies and School of Physics and Engineering,Guangzhou,China,510275 | |
| https://ieeexplore.ieee.org/document/8993510 | |
| A Silicon Photonics Technology for 400 Gbit/s Applications | |
| STMicroelectronics,Crolles,France | |
| https://ieeexplore.ieee.org/document/8993627 | |
| Machine learning | |
| Design Considerations for Efficient Deep Neural Networks on Processing-in-Memory Accelerators | |
| Massachusetts Institute of Technology,Cambridge,USA | |
| https://ieeexplore.ieee.org/document/8993662 | |
| Optimal Design Methods to Transform 3D NAND Flash into a High-Density, High-Bandwidth and Low-Power Nonvolatile Computing in Memory (nvCIM) Accelerator for Deep-Learning Neural Networks (DNN) | |
| Macronix International Co., Ltd,Hsinchu,Taiwan | |
| https://ieeexplore.ieee.org/document/8993652 | |
| Quantum | |
| A Probabilistic Approach to Quantum Inspired Algorithms | |
| Purdue University,School of Electrical and Computer Engineering,IN,USA,47907 | |
| https://ieeexplore.ieee.org/document/8993655 | |
| Device engineering for diamond quantum sensors | |
| Tokyo Institute of Technology,Meguro, Tokyo,Japan | |
| https://ieeexplore.ieee.org/document/8993656 |
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